Datasheet > RLT6410G

RLT6410G

更新时间： 2024-01-16 04:03:06

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
1页	47K
描述
Laser Diode

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中文翻译

获取价格

技术参数
数据手册

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RLT6410G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

RLT6410G 数据手册

ROITHNER LASERTECHNIK

A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

e-mail: office@roithner-laser.com http://www.roithner-laser.com

RLT6410G TECHNICAL DATA

Visible Wavelength Laserdiode

NOTE!

Structure: AlGaInP, index guided

Lasing wavelength: 645 nm typ.

Max. optical power: 10 mW

Package: 9 mm

LASERDIODE

MUST BE COOLED!

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Maximum Ratings (Tc=25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operation Case Temperature

Storage Temperature

SYMBOL

P_o

RATING

-10 .. +40

-40 .. +85

UNIT

°C

V_R(LD)

V_R(PD)

T_C

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN

TYP MAX UNIT

Threshold Current

Operation Current

Operating Voltage

Lasing Wavelength

Beam Divergence

Monitor Current

2.0

640

2.4

645

2.7

650

µA

µm

I_op

V_op

l _p

q_//

q_^

P_o= 10 mW

I_m

A_s

Astigmatism

中文翻译

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