Datasheet > RJP30E2DPK-M0

RJP30E2DPK-M0

更新时间： 2024-11-11 07:20:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关双极性晶体管
页数	文件大小	规格书
7页	159K
描述
Silicon N Channel IGBT High Speed Power Switching

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RJP30E2DPK-M0 数据手册

Preliminary Datasheet

RJP30E2DPK-M0

R07DS0348EJ0100

Rev.1.00

Silicon N Channel IGBT

High Speed Power Switching

Apr 12, 2011

Features

•

Trench gate technology (G5H series)

Low collector to emitter saturation voltage V_CE(sat)= 1.7 V typ

High speed switching tf = 150 ns typ

Low leak current I_CES= 1 μA max

Outline

RENESAS Package code: PRSS0004ZH-A

(Package name: TO-3PSG)

1. Gate

2. Collector

3. Emitter

4. Collector (Flange)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Symbol

V_CES

V_GES

Ratings

Unit

360

±30

Collector peak current

ic(peak) ^Note1

200

Note2

Collector dissipation

P_C

Junction to case thermal impedance

Junction temperature

θj-c

2.5

°C/ W

°C

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Tc = 25°C

R07DS0348EJ0100 Rev.1.00

Apr 12, 2011

Page 1 of 6

12 3 4 5 6 7

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