Datasheet > RJP30H2A

RJP30H2A

更新时间： 2024-11-12 01:12:55

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	159K
描述
Trench gate and thin wafer technology

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RJP30H2A 数据手册

Datasheet

RJP30H2DPK-M0 / RJP30H2A

R07DS0467EJ0200

Rev.2.00

Silicon N Channel IGBT

High speed power switching

Jun 15, 2011

Features



Trench gate and thin wafer technology (G6H-II series)

Low collector to emitter saturation voltage: V_CE(sat)= 1.4 V typ

High speed switching: t_f= 100 ns typ, t_f= 180 ns typ

Low leak current: I_CES= 1 A max

Outline

RENESAS Package code: PRSS0004ZH-A

(Package name: TO-3PSG)

1. Gate

2. Collector

3. Emitter

4. Collector (Flange)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to Emitter voltage

Gate to Emitter voltage

Collector current

Symbol

V_CES

V_GES

Ratings

Unit

360

±30

Collector peak current

ic(peak) ^Note1

250

Note2

Collector dissipation

P_C

Junction to case thermal impedance

Junction temperature

j-c

2.08

°C/ W

°C

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Tc = 25C

R07DS0467EJ0200 Rev.2.00

Jun 15, 2011

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