April 2010
Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET
Low ON resistance
Low Qg
IGBT
Low VCE (sat)
High-speed switching
High avalanche tolerance
PDP System
PDP trends
Power device
X
Y
High breakdown
voltage
High Intensity
Panel
Sustain
circuit
Sustain
circuit
High pressure Gas
Low resistance
High Efficiency
High speed switching
Addressing IC
Optimum FET
Wide MOSFET
line-ups
Low Cost
Timing
control
Power
supply
PDP
Signal
processing
TV/PC
Signal
High Speed IGBT
Package
RDS(on)
IGBT
Product Lineup
Power MOSFET
Maximum Rating
Electrical Characteristics
P/N
VDSS
(V)
ID
(A)
15
30
25
30
35
30
50
25
25
40
20
VGS
VGS(off)
typ(V)
2.0
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
typ(mΩ
85
)
100
100
230
230
230
250
250
300
300
300
350
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P
2.0
3.5
3.5
3.5
3.5
3.5
25
65
48
30
53
40
3.5
2.8
3.5
75
TO-3P
120
60
LDPAK
TO-3P
3.5
100
TO-3P
IGBT (High-speed type)
Maximum Rating
Electrical Charcteristics
VCE(sat) tf
(μS)
P/N
VCES
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50
VGE
(V)
Package
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400
(V) typ
ꢀ
ꢀtyp
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
1.5
1.7
2.0
1.7
1.8
1.5
1.8
1.5
1.6
1.6
1.6
1.6
1.4
1.4
1.7
0.12
0.12
0.15
0.30
0.15
0.30
0.15
0.3
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK
0.3
0.15
0.15
0.15
0.3
0.3
0.35
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
©2010. Renesas Electronics Corporation, All rights reserved.