RHRU5040, RHRU5050, RHRU5060
Data Sheet
April 1995
File Number 3919.1
50A, 400V - 600V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns
RHRU5040, RHRU5050 and RHRU5060 (TA49065) are
hyperfast diodes with soft recovery characteristics
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175 C
(t
< 45ns). They have half the recovery time of ultrafast
RR
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PACKAGING AVAILABILITY
Package
PART NUMBER
RHRU5040
PACKAGE
TO-218
BRAND
RHRU5040
JEDEC STYLE TO-218
RHRU5050
TO-218
TO-218
RHRU5050
RHRU5060
ANODE
RHRU5060
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings
T
= +25 C, Unless Otherwise Specified
C
RHRU5040
RHRU5050
500
RHRU5060
600
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . V
400
400
400
50
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . V
500
600
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
500
600
R
Average Rectified Forward Current . . . . . . . . . . . . . . . I
50
50
F(AV)
o
(T = +93 C)
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
100
500
100
500
100
500
A
A
FSM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P
150
40
150
40
150
40
W
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . E
mj
AVL
o
Operating and Storage Temperature . . . . . . . . . . . .T
, T
-65 to +175
-65 to +175
-65 to +175
C
STG
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1