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RHRP8120 PDF预览

RHRP8120

更新时间: 2024-11-29 12:56:43
品牌 Logo 应用领域
THINKISEMI 二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
3页 630K
描述
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes

RHRP8120 数据手册

 浏览型号RHRP8120的Datasheet PDF文件第2页浏览型号RHRP8120的Datasheet PDF文件第3页 
RHRP8120  
®
RHRP8120  
Pb Free Plating Product  
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes  
TO-220AC/TO-220C-2P  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
RHRP8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
ABSOLUTE MAXIMUM RATINGS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Maximum D.C. Reverse Voltage  
Maximum Repetitive Reverse Voltage  
Average Forward Current  
RMS Forward Current  
Test Conditions  
Values  
1200  
1200  
10  
Unit  
V
VR  
VRRM  
IF(AV)  
IF(RMS)  
IFSM  
V
TC=110°C  
A
TC=110°C  
15  
A
A
TJ=45°C, t=10ms, 50Hz, Sine  
100  
Non-Repetitive Surge Forward Current  
Power Dissipation  
PD  
70  
-40 to +150  
-40 to +150  
1.1  
W
°C  
TJ  
Junction Temperature  
TSTG  
Torque  
RθJC  
Weight  
Storage Temperature Range  
Module-to-Sink  
°C  
RecommendedM3)  
N·m  
°C /W  
g
Thermal Resistance  
Junction-to-Case  
1.8  
2.2  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max.  
Unit  
100  
500  
µA  
VR=1200V  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
IRM  
Reverse Leakage Current  
µA  
VR=1200V, TJ=125°C  
IF=10A  
2.4  
1.85  
22  
--  
--  
--  
--  
--  
--  
--  
V
V
VF  
Forward Voltage  
IF=10A, TJ=125°C  
trr  
Reverse Recovery Time  
IF=1A, VR=30V, diF/dt=-200A/μs  
VR=600V, IF=10A  
ns  
ns  
A
trr  
Reverse Recovery Time  
44  
diF/dt=-200A/μs, TJ=25°C  
IRRM  
trr  
Max. Reverse Recovery Current  
Reverse Recovery Time  
3.5  
220  
6.5  
VR=600V, IF=10A  
ns  
A
diF/dt=-200A/μs, TJ=125°C  
IRRM  
Max. Reverse Recovery Current  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/3  
http://www.thinkisemi.com/  

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