RHRP860_F085
Data Sheet
September 2011
8A,600V Hyperfast Diodes
Features
The RHRP860_F085 is hyperfast diodes with soft
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
recovery characteristics (t < 30ns). It has half the
recovery time of ultrafast diodes and is silicon nitride
rr
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
passivated ion-implanted epitaxial planar construction.
This device is intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many
power switching circuits reducing power loss in the switching
transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49059.
Ordering Information
Packaging
JEDEC TO-220AC
PART NUMBER
PACKAGE
BRAND
RHRP860_F085
RHRP860_F085
TO-220AC
ANODE
CATHODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRP860_F085 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
600
600
600
8
V
V
V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
A
F(AV)
o
(T = 150 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
16
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
-65 to 175
C
STG
J
©2011 Fairchild Semiconductor Corporation
RHRP860_F085 Rev. C