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RHRP8120-F102 PDF预览

RHRP8120-F102

更新时间: 2024-11-29 11:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 软恢复二极管超快速软恢复二极管局域网测试
页数 文件大小 规格书
6页 700K
描述
8A,1200V,极快速二极管

RHRP8120-F102 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:2.19其他特性:FREE WHEELING DIODE
应用:HYPERFAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3.2 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大功率耗散:75 W
最大重复峰值反向电压:1200 V最大反向电流:100 µA
最大反向恢复时间:0.07 µs反向测试电压:1200 V
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE

RHRP8120-F102 数据手册

 浏览型号RHRP8120-F102的Datasheet PDF文件第2页浏览型号RHRP8120-F102的Datasheet PDF文件第3页浏览型号RHRP8120-F102的Datasheet PDF文件第4页浏览型号RHRP8120-F102的Datasheet PDF文件第5页浏览型号RHRP8120-F102的Datasheet PDF文件第6页 
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