Datasheet > RGT

RGT

更新时间： 2024-11-24 00:35:19

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
3页	244K
描述
Stable thick-film technology

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中文翻译

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OBSOLETE

Resistors

Make Possible

Thick Film Temperature

Compensaꢀon Resistor

Exclusive thick film process

results in a very linear, negative,

3000 ppm/˚C resistance

temperature characteristic

RGT Series

Heat conducting

ceramic substrate

Superior linearity

Digital Marking

ꢀ Stableꢀthick-ﬁlmꢀtechnology

High conductivity plate-on

nickel termination

ꢀ Negaꢁveꢀtemperatureꢀcoeﬃcient

ꢀ EﬀecꢁveꢀcompensaꢁonꢀforꢀposiꢁveꢀTCꢀdevices,ꢀ

ꢀ semiconductors,ꢀandꢀcopper

Tin or tin-lead electroplated

copper leads

AllꢀPb-freeꢀpartsꢀcomplyꢀwithꢀEUꢀDirecꢁveꢀ2011/65/EUꢀ(RoHS2)

Speciﬁcations

Temperature

Coefﬁcient

Resistance

Ratio

Standard Resistance

Values

Std. Resistance

Tol. @ 25°C

Linearity

R25°C/R125°C =

1.37

740, 1K and 10K. Others

available

-0.30%/°C ^(minus

3000 ppm/°C @ 25°C)

<1.2% deviation per 100°C

(typical over range from -55°C to 140°C)

±2%, ±5%, ±10%

Operating

Temperature

Range

High Temp

Stability

Time Constraints

Dissipation Constants

Element

7.4 sec for RGT-1,

2.9 sec. for RGT-2

8.1mW/°C for RGT-1,

4.7mW°C for RGT-2

2000 hours @

fused thick-ﬁlm

composition

-55°C to + 175°C

(time to achieve 63.2% of an applied

(power required to raise sensor temperature

175°C, <0.5%∆R

step-change in temperature in still air)

1°C in a still air ambient of 25°C)

Resistance to

Soldering Heat

Marking Resistance

to Solvents

Lead

Solderability

Substrate

Lead Pull

MIL-STD-202E, Method

solid-core alumina

MIL-STD-202,

Method 208

5 lbs for 5 sec.

MIL-STD-202, Method 215

ceramic

210A, cond. A, <0.5%∆R

Applications

Compensates transistors, diodes,

sensors, transducers, hall devices,

microprocessors, and strain gauges.

Proven in automotive under-hood use.

Curve Tolerances (±)

Temperature

G Tol.

J Tol.

K Tol.

-55°C

-15°C

0°C

25°C

50°C

-67°F

+9°F

+32°F

77°F

122°F

167°F

212°F

257°F

302°F

347°F

10%

7.5%

6.6%

±5%

5.5%

6.0%

6.5%

7.0%

7.5%

8.0%

15%

4.5%

3.6%

±2%

2.5%

3.0%

3.5%

4.0%

4.5%

5.0%

12.5%

11.6%

±10%

10.5%

11.0%

11.5%

12.0%

12.5%

13.0%

75°C

100°C

125°C

150°C

175°C

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without notice or liability.

All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.

www.ttelectronicsresistors.com

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RGT00TS65D	ROHM	获取价格	罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。
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RGT16BM65D	ROHM	获取价格	罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了
RGT16NL65D	ROHM	获取价格	RGT16NL65D是低VCE(sat)的Field Stop Trench IGBT。适
RGT16NS65D(LPDS)	ROHM	获取价格	罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。
RGT16NS65D(TO-262)	ROHM	获取价格	罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。
RGT16TM65D	ROHM	获取价格	RGT16TM65D是低VCE(sat)的Field Stop Trench IGBT。适
RGT20NL65	ROHM	获取价格	RGT20NL65是一款具有低VCE(sat)和低开关损耗的IGBT。适用于逆变器、UPS
RGT20TM65D	ROHM	获取价格	RGT20TM65D是一款低VCE(sat)的场截止沟槽型IGBT。适用于逆变器、UPS、
RGT2-30001002G	TTELEC	获取价格	Thick Film Temperature Compensation Resistor

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