5秒后页面跳转
RGP30K-B PDF预览

RGP30K-B

更新时间: 2024-11-06 13:01:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode

RGP30K-B 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.38
Is Samacsys:NJESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

RGP30K-B 数据手册

 浏览型号RGP30K-B的Datasheet PDF文件第2页浏览型号RGP30K-B的Datasheet PDF文件第3页 
M C C  
RGP30A  
THRU  
RGP30M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
3.0 Amp Glass  
Passivated Junction  
Fast Recovery  
Rectifiers  
Features  
·
·
·
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
3.0 amperes operation at T =55OC and with no  
A
thermal runaway.  
·
·
Typical I less than 0.2uA  
Fast switching for high efficiency  
R
50 to 1000 Volts  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 25OC/W Junction toAmbient  
Maximum  
Recurrent  
Maximum DC  
Blocking  
MCC  
Maximum  
D
Part Number  
Peak Reverse  
Voltage  
RMS Voltage  
Voltage  
RGP30A  
RGP30B  
RGP30D  
RGP30G  
RGP30J  
RGP30K  
RGP30M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
140V  
280V  
420V  
560V  
700V  
Cathode  
Mark  
B
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Maximum Average  
Forward Current  
Peak Forward Surge  
Current  
IF(AV)  
3.0 A  
T = 55OC  
A
C
IFSM  
125A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
MM  
MIN  
VF  
1.3V  
I
= 3.0A;  
FM  
DIM  
A
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
1.20  
25.40  
B
C
---  
.048  
1.000  
IR  
5.0uA  
T =25OC  
A
D
100uA T =150OC  
A
Maximum Reverse  
Recovery Time  
RGP30A-30G  
RGP30J  
RGP30K-30M  
Typical Junction  
Capacitance  
T =25OC  
J
Trr  
CJ  
150nS I =0.5A  
F
250nS IR=1.0A  
500nS IRR=0.25A  
60pF  
Measured at  
1.0MHz, VR=4.0V  
www.mccsemi.com  

与RGP30K-B相关器件

型号 品牌 获取价格 描述 数据表
RGP30K-BP MCC

获取价格

暂无描述
RGP30K-E3/23 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
RGP30K-E3/54 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30K-E3/73 VISHAY

获取价格

DIODE GEN PURP 800V 3A DO201AD
RGP30KH ZOWIE

获取价格

SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER
RGP30KHE3/54 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30K-HE3/54 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30KHE3/73 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30K-HE3/73 VISHAY

获取价格

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30K-T MCC

获取价格

Rectifier Diode,