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RGP30K-TP PDF预览

RGP30K-TP

更新时间: 2024-11-06 13:12:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

RGP30K-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:DO-201AD, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.15
其他特性:METALLURGICALLY BONDED应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:0.5 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RGP30K-TP 数据手册

 浏览型号RGP30K-TP的Datasheet PDF文件第2页浏览型号RGP30K-TP的Datasheet PDF文件第3页 
M C C  
RGP30A  
THRU  
RGP30M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
3.0 Amp Glass  
Passivated Junction  
Fast Recovery  
Rectifiers  
Features  
·
·
·
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
3.0 amperes operation at T =55OC and with no  
A
thermal runaway.  
·
·
Typical I less than 0.2uA  
Fast switching for high efficiency  
R
50 to 1000 Volts  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 25OC/W Junction toAmbient  
Maximum  
Recurrent  
Maximum DC  
Blocking  
MCC  
Maximum  
D
Part Number  
Peak Reverse  
Voltage  
RMS Voltage  
Voltage  
RGP30A  
RGP30B  
RGP30D  
RGP30G  
RGP30J  
RGP30K  
RGP30M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
140V  
280V  
420V  
560V  
700V  
Cathode  
Mark  
B
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Maximum Average  
Forward Current  
Peak Forward Surge  
Current  
IF(AV)  
3.0 A  
T = 55OC  
A
C
IFSM  
125A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
MM  
MIN  
VF  
1.3V  
I
= 3.0A;  
FM  
DIM  
A
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
1.20  
25.40  
B
C
---  
.048  
1.000  
IR  
5.0uA  
T =25OC  
A
D
100uA T =150OC  
A
Maximum Reverse  
Recovery Time  
RGP30A-30G  
RGP30J  
RGP30K-30M  
Typical Junction  
Capacitance  
T =25OC  
J
Trr  
CJ  
150nS I =0.5A  
F
250nS IR=1.0A  
500nS IRR=0.25A  
60pF  
Measured at  
1.0MHz, VR=4.0V  
www.mccsemi.com  

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