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RGP30K-E3/54 PDF预览

RGP30K-E3/54

更新时间: 2024-11-06 20:50:51
品牌 Logo 应用领域
威世 - VISHAY PC功效二极管
页数 文件大小 规格书
4页 79K
描述
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

RGP30K-E3/54 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.13
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:401893Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:DO-201ADSamacsys Released Date:2018-04-11 16:31:38
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:0.5 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

RGP30K-E3/54 数据手册

 浏览型号RGP30K-E3/54的Datasheet PDF文件第2页浏览型号RGP30K-E3/54的Datasheet PDF文件第3页浏览型号RGP30K-E3/54的Datasheet PDF文件第4页 
RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.2 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-201AD  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer and telecommunication.  
IF(AV)  
3.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
VF  
125 A  
1.3 V  
MECHANICAL DATA  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IR  
5.0 μA  
TJ max.  
Package  
Diode variation  
175 °C  
DO-201AD  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
IFSM  
3.0  
A
A
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
125  
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and  
storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 07-Nov-16  
Document Number: 88704  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RGP30K-E3/54 替代型号

型号 品牌 替代类型 描述 数据表
RGP30K-E3/73 VISHAY

类似代替

DIODE GEN PURP 800V 3A DO201AD
RGP30KHE3/73 VISHAY

类似代替

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
RGP30KHE3/54 VISHAY

类似代替

DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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