Datasheet > RGP20M-BP

RGP20M-BP

更新时间： 2024-11-17 10:46:07

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	104K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-201AE, DO-201AE, 2 PIN

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中文翻译

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RGP20M-BP 数据手册

M C C

RGP20A

THRU

RGP20M

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

2.0 Amp Glass

Passivated Junction

Fast Recovery

Rectifiers

Features

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

2.0 amperes operation at T =55^OC and with no

thermal runaway.

Typical I less than 0.2uA

50 to 1000 Volts

DO-201AE

Maximum Ratings

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Typical Thermal Resistance: 22^OC/W Junction to Ambient

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

Blocking

MCC

Part Number

Maximum

RMS Voltage

Voltage

RGP20A

RGP20B

RGP20D

RGP20G

RGP20J

RGP20K

RGP20M

50V

100V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

Cathode

Mark

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Maximum Average

Forward Current

Peak Forward Surge

Current

I_F(AV)

2.0 A

T = 55^OC

I_FSM

80A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.3V

I_FM= 2.0A;

DIMENSIONS

T =25^OC

INCHES

MIN

---

MIN

DIM

MAX

.370

.250

.042

---

MAX

9.50

6.40

1.06

---

NOTE

5.0uA

T =25^OC

---

200uA T =125^OC

---

.038

1.000

0.96

25.40

Maximum Reverse

Recovery Time

RGP20A-20G

RGP20J

150nS I =0.5A, I_R=1.0A,

250nS I =0.25A

RGP20K-20M

Typical Junction

Capacitance

500nS

35pF

C_J

Measured at

f=1.0MH_Z

V_R=4.0V

www.mccsemi.com

Revision: 3

2003/04/30

12 3

中文翻译

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