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RGP20M-TP PDF预览

RGP20M-TP

更新时间: 2024-11-16 13:12:55
品牌 Logo 应用领域
美微科 - MCC 整流二极管功效
页数 文件大小 规格书
3页 85K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-201AE, DO-201AE, 2 PIN

RGP20M-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-201AE
包装说明:DO-201AE, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
Is Samacsys:N其他特性:METALLURGICALLY BONDED
应用:FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:0.5 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RGP20M-TP 数据手册

 浏览型号RGP20M-TP的Datasheet PDF文件第2页浏览型号RGP20M-TP的Datasheet PDF文件第3页 
M C C  
RGP20A  
THRU  
RGP20M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2.0 Amp Glass  
Passivated Junction  
Fast Recovery  
Rectifiers  
Features  
·
·
·
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
2.0 amperes operation at T =55OC and with no  
A
thermal runaway.  
·
Typical I less than 0.2uA  
R
50 to 1000 Volts  
DO-201AE  
Maximum Ratings  
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 22OC/W Junction to Ambient  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
Blocking  
MCC  
Part Number  
Maximum  
RMS Voltage  
D
Voltage  
RGP20A  
RGP20B  
RGP20D  
RGP20G  
RGP20J  
RGP20K  
RGP20M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
140V  
280V  
420V  
560V  
700V  
Cathode  
Mark  
B
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Maximum Average  
Forward Current  
Peak Forward Surge  
Current  
IF(AV)  
2.0 A  
T = 55OC  
A
C
IFSM  
80A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.3V  
IFM = 2.0A;  
A
DIMENSIONS  
T =25OC  
INCHES  
MIN  
---  
MM  
MIN  
DIM  
A
MAX  
.370  
.250  
.042  
---  
MAX  
9.50  
6.40  
1.06  
---  
NOTE  
5.0uA  
T =25OC  
---  
---  
A
200uA T =125OC  
B
C
---  
.038  
1.000  
A
0.96  
25.40  
D
Maximum Reverse  
Recovery Time  
RGP20A-20G  
RGP20J  
T
rr  
150nS I =0.5A, IR=1.0A,  
F
250nS I =0.25A  
rr  
RGP20K-20M  
Typical Junction  
Capacitance  
500nS  
35pF  
CJ  
Measured at  
f=1.0MHZ  
VR=4.0V  
www.mccsemi.com  

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