Datasheet > RGP20K

RGP20K

更新时间： 2024-11-17 14:51:51

品牌	Logo	应用领域
鲁光 - LGE		二极管快恢复二极管
页数	文件大小	规格书
2页	1588K
描述
快恢复二极管

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中文翻译

获取价格

技术参数
数据手册

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RGP20K 技术参数

Case Style：	DO-15	IVA(A)：	2.0
VRRM (V)：	800	IFSM (A)：	80
VF (V)：	1.3	@IVA(A)：	2.0
Maximum reverse current：	5.0	TRR(nS)：	250
class：	Diodes

RGP20K 数据手册

RGP20A-RGP20M

Fast Recovery Rectifiers

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 2.0 A

Features

Low cost

DO - 15

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC DO-15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-750,Method 2026

Dimensions in millimeters

Polarity: Color band denotes cathode

Weight: 0.014 ounces,0.39 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

RGP RGP

RGP RGP RGP

RGP RGP

UNITS

20A

20B

20D

20G

20J

20K

20M

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

1000

Maximum average forw ard rectified current

2.0

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

I_FSM

80.0

1.3

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 2.0 A

V_F

I_R

Maximumreverse current

@T_A=25

5.0

at rated DC blocking voltage @T_A=100

Maximum reverse recovery time (Note1)

100.0

150

250

t_rr

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

C_J

R_θ

/ W

Operating junction temperature range

- 55---- + 150

T_J

Storage temperature range

T_STG

NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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