Datasheet > RFW2N06RLE

RFW2N06RLE

更新时间： 2024-09-09 22:14:51

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
5页	45K
描述
2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

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RFW2N06RLE 数据手册

RFW2N06RLE

Data Sheet

July 1999

File Number 2838.3

2A, 60V, 0.160 Ohm, Logic Level,

N-Channel Power MOSFET

Features

• 2A, 60V

The RFW2N06RLE N-Channel, logic level, ESD protected,

power MOSFET is manufactured using the MegaFET

process. This process, which uses feature sizes

• r (on) = 0.160Ω

• UIS Rating Curve (Single Pulse)

approaching those of LSI integrated circuits, gives optimum

utilization of silicon, resulting in outstanding performance.

The RFW2N06RLE was designed for use with logic level

(5V) driving sources in applications such as programmable

controllers, automotive switching, switching regulators,

switching converters, motor and relay drivers and emitter

switches for bipolar transistors. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate biases in the 3V to

5V range, thereby facilitating true on-off power control

directly from logic circuit supply voltages.

• Design Optimized For 5 Volt Gate Drive

• Can be Driven Directly from CMOS, NMOS, TTL

Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA9861.

• Electrostatic Discharge Protected

Ordering Information

• Related Literature

PART NUMBER

PACKAGE

BRAND

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

RFW2N06RLE

HEXDIP

RFW2N06RLE

NOTE: When ordering, use the entire part number.

Symbol

Packaging

4 PIN HEXDIP

DRAIN

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-283

12 3 4 5

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