Datasheet > RFNL5TJ6S

RFNL5TJ6S

更新时间： 2024-09-11 11:14:43

品牌	Logo	应用领域
罗姆 - ROHM		超快速恢复二极管功率因数校正
页数	文件大小	规格书
8页	411K
描述
RFNL5TJ6S是适用于PFC电路用途的超快速恢复二极管。

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中文翻译

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RFNL5TJ6S 数据手册

Super Fast Recovery Diode

RFNL5TJ6S

Data Sheet

lSerise

lDimensions (Unit : mm)

lStructure

4.5±0.1

2.6±0.1

f3.1±0.1

Standard Fast Recovery

10.2±0.2

lApplication

General rectification

For PFC

(DCM : Discontinuous Current Mode)

Anode

Cathode

RFNL5

TJ6S

lFeatures

2.6±0.1

1) Ultra low forward voltage

2) Low switching loss

3) High current overload capacity

1.4±0.2

0.6±0.1

2.54±0.1

5.08±0.1

ROHM : TO-220ACFP

0.83±0.1

lConstruction

Silicon epitaxial planar type

: Manufacture year, week,day, package code

: Serial number

lAbsolute Maximum Ratings (T_a= 25°C)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

Conditions

Limits

Unit

V_RM

V_R

I_o

Duty≦0.5

600

Direct reverse voltage

60Hz half sin wave , resistive load

Average current

60Hz half sin wave, one cycle, non-repetitive at T_j=25°C

Non-repetitive forward surge current I_FSM

T_j

150

Operating junction temperature

Storage temperature

°C

T_stg

-55 to +150 °C

lElectrical Characteristics (T_j= 25°C)

Parameter

Conditions

Symbol

V_F

Min. Typ. Max. Unit

T_j=25°C

T_j=125°C

T_j=25°C

T_j=125°C

0.9

1.1

1.3

I_F=5A

Forward voltage

0.95

0.02 10

I_R

V_R=600V

Reverse current

175

4.8

200

130

I_F=0.5A, I_R=1A, Irr=0.25×I_R

I_F=5A, V_R=400V, dI_F/dt=-100A/ms

I_F=5A, dI_F/dt=100A/ms,

V_FR=1.1xV_Fmax

Reverse recovery time

trr

Forward recovery time

tfr

V_Fp

Forward recovery voltage

R_th(j-a)

R_th(j-c)

Junction to ambient

14 °C/W

4.0 °C/W

Thermal resistance

Junction to case

www.rohm.com

2015.01 - Rev.A

1/5

12 3 4 5 6 7 8

中文翻译

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