Datasheet > RFN5BGE3S

RFN5BGE3S

更新时间： 2024-11-30 11:08:19

品牌	Logo	应用领域
罗姆 - ROHM		快速恢复二极管
页数	文件大小	规格书
7页	1330K
描述
RFN5BGE3S是一般整流用的快速恢复二极管。

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中文翻译

获取价格

数据手册

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RFN5BGE3S 数据手册

Super Fast Recovery Diode

RFN5BGE3S

Datasheet

Series

Dimensions (Unit : mm)

Land size figure (Unit : mm)

6.0

Standard Fast Recovery

Application

1.6

General rectification

TO-252

2.3 2.3

Features

Structure

Cathode

ROHM : TO-252GE

JEITA : -

1) Low switching loss

High current overload capacity

Open

Anode

Taping specifications (Unit : mm)

Construction

Silicon epitaxial planar type

Absolute maximum ratings (at T_c= 25°C unless otherwise specified)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

V_RM

V_R

Conditions

Duty≦0.5

Limits

Unit

350

Reverse direct voltage

60Hz half sin waveform,

resistive load, T_c=95°CMax

60Hz half sin waveform,

non-repetitive, T_j=25°C

I_o

Average rectified foward current

Peak forward surge current

Junction temperature

I_FSM

T_j

150

°C

T_stg

Storage temperature

55 ～150

Electrical characteristics (at T_j= 25°C unless otherwise specified)

Parameter

Forward voltage

Conditions

I_F=5A

Symbol

V_F

Min. Typ. Max. Unit

1.1

1.5

A

V_R=350V

I_R

Reverse current

I_F=0.5A,I_R=1A,Irr=0.25×I_R

Junction to case

Reverse recovery time

trr

Thermal resistance⁽¹⁾

R_th(j-c)

°C / W

(1) Value is guaranteed by design

www.rohm.com

2020/03/12_Rev.001

1/4

12 3 4 5 6 7

中文翻译

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