Datasheet > RF5176

RF5176

更新时间： 2024-01-04 06:17:56

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波功率放大器
页数	文件大小	规格书
6页	172K
描述
3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER

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中文翻译

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技术参数
数据手册

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RF5176 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
构造：	COMPONENT	增益：	26 dB
最大输入功率 (CW)：	6 dBm	最大工作频率：	2000 MHz
最小工作频率：	1850 MHz	最高工作温度：	100 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
最大电压驻波比：	5	Base Number Matches：	1

RF5176 数据手册

Preliminary

RF5176

3V W-CDMA POWER 1900MHZ/

3V LINEAR POWER AMPLIFIER

Typical Applications

• 3V 1850-1910MHz CDMA-2000 Handsets • Commercial and Consumer Systems

• 3V 1920-1980MHz W-CDMA Handsets

• Spread-Spectrum Systems

• Portable Battery-Powered Equipment

1.00

0.90

4.00

sq.

Product Description

0.60

0.24 typ

The RF5176 is a high-power, high-efficiency linear ampli-

fier IC targeting 3V handheld systems. The device is

manufactured on an advanced Gallium Arsenide Hetero-

junction Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in 3V

CDMA-2000 and W-CDMA handsets as well as other

applications in the 1850MHz to 2000MHz band. The

device is self-contained, and the output can be easily

matched to obtain optimum power, efficiency, and linear-

ity characteristics over all recommended supply voltages.

The device has a continuously variable bias circuit to

allow idle current to be optimized for a given output

power.

0.65

0.30

4 PLCS

2.10

sq.

0.20

0.75

0.50

12°

MAX

0.23

0.13

0.05

0.50

4 PLCS

Dimensions in mm.

Note orientation of package.

NOTES:

Shaded lead is Pin 1.

Pin 1 identifier must exist on top surface of package by identification

mark or feature on the package body. Exact shape and size is optional.

Dimension applies to plated terminal: to be measured between 0.02 mm

and 0.25 mm from terminal end.

Package Warpage: 0.05 mm max.

Die Thickness Allowable: 0.305 mm max.

Optimum Technology Matching® Applied

Package Style: LCC, 20-Pin, 4x4

Si BJT

GaAs MESFET

ü^{GaAs HBT}

SiGe HBT

Si Bi-CMOS

Si CMOS

Features

• Single 3V Supply

• 27dBm Linear Output Power

• 26dB Linear Gain

VREG1

VCC BIAS

VREG2

15 NC

• 40% Linear Efficiency

• On-board Power Down Mode

14 NC

13 VCC1

12 VCC1

VS2

BIAS GND

11 NC

Ordering Information

RF5176

3V W-CDMA Power 1900MHZ/ 3V Linear Power

Amplifier

RF5176 PCBA

Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A0 010910

2-197

12 3 4 5 6

中文翻译

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与RF5176相关器件

型号	品牌	获取价格	描述	数据表
RF5176PCBA	RFMD	获取价格	3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER
RF5184	RFMD	获取价格	DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE
RF5184PCBA-410	RFMD	获取价格	DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE
RF5187	RFMD	获取价格	LOW POWER LINEAR AMPLIFIER
RF5187_06	RFMD	获取价格	LOW POWER LINEAR AMPLIFIER
RF5187_1	RFMD	获取价格	LOW POWER LINEAR AMPLIFIER
RF5187PCBA	RFMD	获取价格	LOW POWER LINEAR AMPLIFIER
RF5187PCBA-41X	RFMD	获取价格	LOW POWER LINEAR AMPLIFIER
RF5188	RFMD	获取价格	3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE
RF5188_1	RFMD	获取价格	3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE

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