Datasheet > RF2132_06

RF2132_06

更新时间： 2024-10-26 04:08:27

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
6页	132K
描述
LINEAR POWER AMPLIFIER

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RF2132_06 数据手册

RF2132

LINEAR POWER AMPLIFIER

RoHS Compliant & Pb-Free Product

Typical Applications

• 4.8V AMPS Cellular Handsets

• 4.8V CDMA/AMPS Handsets

• 4.8V JCDMA/TACS Handsets

• Driver Amplifier in Cellular Base Stations

• Portable Battery-Powered Equipment

Product Description

The RF2132 is a high power, high efficiency linear ampli-

fier IC. The device is manufactured on an advanced Gal-

lium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-

tal cellular equipment, spread-spectrum systems, and

other applications in the 800MHz to 950MHz band. The

device is self-contained with 50Ω input and the output

can be easily matched to obtain optimum power, effi-

ciency, and linearity characteristics over varying supply

and control voltages.

-A-

0.009

0.004

0.158

0.150

0.021

0.014

0.069

0.064

0.392

0.386

0.050

0.244

0.230

0.060

0.054

8° MAX

0° MIN

0.010

0.008

0.035

0.016

Optimum Technology Matching® Applied

Package Style: Standard Batwing

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Single 4.2V to 5.0V Supply

• Up to 29 dBm Linear Output Power

• 29dB Gain With Analog Gain Control

• 45% Linear Efficiency

VCC1

NC 2

16GND

15RF OUT

14RF OUT

13GND

• On-board Power Down Mode

• 800MHz to 950MHz Operation

RF IN3

GND4

GND5

GND6

GND7

PC 8

12GND

Ordering Information

11RF OUT

10RF OUT

9 GND

BIAS

RF2132

Linear Power Amplifier

RF2132PCBA-41X Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev B10 060908

2-109

12 3 4 5 6

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