RF2155
3V PROGRAMMABLE GAIN POWER AMPLIFIER
0
RoHS Compliant & Pb-Free Product
Typical Applications
• Analog Communication Systems
• 900MHz Spread Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• 3V Applications
Product Description
The RF2155 is a 3V medium power programmable gain
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in analog cellular phone transmitters or ISM
applications operating at 915MHz. The device is self-con-
tained with the exception of the output matching network
and power supply feed line. A two-bit digital control pro-
vides 4 levels of power control, in 8dB steps.
-A-
0.009
0.004
0.158
0.150
0.021
0.014
0.069
0.064
0.392
0.386
0.050
0.244
0.230
0.060
0.054
8° MAX
0° MIN
0.010
0.008
0.035
0.016
Optimum Technology Matching® Applied
Package Style: Standard Batwing
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Single 3V Supply
• 500mW CW Output Power
• 31dB Small Signal Gain
NC
VCC1
VCC2
GND
GND
GND1
RF IN
PD
1
16 G16
2
3
4
5
6
7
8
15 G8
• Up to 60% Efficiency
14 RF OUT
13 GND
12 GND
11 RF OUT
10 NC
• Digitally Controlled Output Power
• 430MHz to 930MHz Frequency Range
Ordering Information
RF2155
3V Programmable Gain Power Amplifier
RF2155PCBA-41X Fully Assembled Evaluation Board
9
NC
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev B8 060921
2-173