Datasheet > RF2155PCBA

RF2155PCBA

更新时间： 2024-10-25 22:34:39

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
8页	94K
描述
3V PROGRAMMABLE GAIN POWER AMPLIFIER

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中文翻译

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数据手册

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RF2155PCBA 数据手册

RF2155

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Typical Applications

• Analog Communication Systems

• 900MHz Spread Spectrum Systems

• 400MHz Industrial Radios

• Driver Stage for Higher Power Applications

• 3V Applications

Product Description

-A-

0.009

0.004

0.158

0.150

The RF2155 is a 3V medium power programmable gain

amplifier IC. The device is manufactured on an advanced

Gallium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in analog cellular phone transmitters or ISM

applications operating at 915MHz. The device is self-con-

tained with the exception of the output matching network

and power supply feed line. A two-bit digital control pro-

vides 4 levels of power control, in 8dB steps.

0.021

0.014

0.069

0.064

0.392

0.386

0.050

0.244

0.230

0.060

0.054

8° MAX

0° MIN

0.010

0.008

0.035

0.016

Optimum Technology Matching® Applied

Package Style: Standard Batwing

Si BJT

GaAs MESFET

ü^{GaAs HBT}

SiGe HBT

Si Bi-CMOS

Si CMOS

Features

• Single 3V Supply

VCC1

VCC2

GND

GND1

RF IN

16 G16

• 500mW CW Output Power

• 31dB Small Signal Gain

15 G8

14 RF OUT

13 GND

12 GND

11 RF OUT

10 NC

• Up to 60% Efficiency

• Digitally Controlled Output Power

• 430MHz to 930MHz Frequency Range

Ordering Information

RF2155

RF2155 PCBA

3V Programmable Gain Power Amplifier

Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev B3 010417

2-179

12 3 4 5 6 7 8

中文翻译

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