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RF2155PCBA PDF预览

RF2155PCBA

更新时间: 2024-10-25 22:34:39
品牌 Logo 应用领域
威讯 - RFMD 放大器功率放大器
页数 文件大小 规格书
8页 94K
描述
3V PROGRAMMABLE GAIN POWER AMPLIFIER

RF2155PCBA 数据手册

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RF2155  
3V PROGRAMMABLE GAIN POWER AMPLIFIER  
2
Typical Applications  
• Analog Communication Systems  
• 900MHz Spread Spectrum Systems  
• 400MHz Industrial Radios  
• Driver Stage for Higher Power Applications  
• 3V Applications  
2
Product Description  
-A-  
0.009  
0.004  
0.158  
0.150  
The RF2155 is a 3V medium power programmable gain  
amplifier IC. The device is manufactured on an advanced  
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)  
process, and has been designed for use as the final RF  
amplifier in analog cellular phone transmitters or ISM  
applications operating at 915MHz. The device is self-con-  
tained with the exception of the output matching network  
and power supply feed line. A two-bit digital control pro-  
vides 4 levels of power control, in 8dB steps.  
0.021  
0.014  
0.069  
0.064  
0.392  
0.386  
0.050  
0.244  
0.230  
0.060  
0.054  
8° MAX  
0° MIN  
0.010  
0.008  
0.035  
0.016  
Optimum Technology Matching® Applied  
Package Style: Standard Batwing  
Si BJT  
GaAs MESFET  
üGaAs HBT  
SiGe HBT  
Si Bi-CMOS  
Si CMOS  
Features  
• Single 3V Supply  
NC  
VCC1  
VCC2  
GND  
GND  
GND1  
RF IN  
PD  
1
2
3
4
5
6
7
8
16 G16  
• 500mW CW Output Power  
• 31dB Small Signal Gain  
15 G8  
14 RF OUT  
13 GND  
12 GND  
11 RF OUT  
10 NC  
• Up to 60% Efficiency  
• Digitally Controlled Output Power  
• 430MHz to 930MHz Frequency Range  
Ordering Information  
RF2155  
RF2155 PCBA  
3V Programmable Gain Power Amplifier  
Fully Assembled Evaluation Board  
9
NC  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev B3 010417  
2-179  

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