Datasheet > RF2145PCBA

RF2145PCBA

更新时间： 2024-10-25 22:43:59

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器分布式控制系统 DCS
页数	文件大小	规格书
6页	79K
描述
DCS1800/1900 POWER AMPLIFIER

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中文翻译

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RF2145PCBA 数据手册

RF2145

DCS1800/1900 POWER AMPLIFIER

Typical Applications

• 4.8V DCS1800/1900 Handsets

• Commercial and Consumer Systems

• Portable Battery Powered Equipment

• 3V DECT Handsets and Base Stations

Product Description

.158

.150

.009

.004

The RF2145 is a high power, high efficiency amplifier IC.

The device is manufactured on an advanced Gallium Ars-

enide Heterojunction Bipolar Transistor (HBT) process,

and has been designed for use as the final RF amplifier in

a 4-cell DCS1800 or DCS1900 handset. The device is

packaged in a 16-lead plastic package with wide ground

leads, and is self-contained with the exception of the out-

put matching network and power supply feed line. Only a

single positive voltage is required to operate with full

power and efficiency, and on-board power control and

power-down functions are provided.

.020

.014

.069

.064

.392

.386

.050

.244

.230

.059

.054

8°MAX

0°MIN

.035

.016

.010

.008

Optimum Technology Matching® Applied

Package Style: SOP-16 QBW1

Si BJT

GaAs MESFET

ü^{GaAs HBT}

SiGe HBT

Si Bi-CMOS

Si CMOS

Features

• Single 4.8V Power Supply

• +32dBm Output Power

GND

VCC1

RF IN

GND

16 NC

15 GND

14 GND

13 RF OUT

12 RF OUT

11 GND

10 GND

• 28dB Small Signal Gain

• 55% Power Added Efficiency

• Power Control

• 1700MHz to 1900MHz Frequency Range

Ordering Information

RF2145

RF2145 PCBA

DCS1800/1900 Power Amplifier

Fully Assembled Evaluation Board

NC 8

9 NC

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev B5 010329

2-141

12 3 4 5 6

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