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RDS070N03 PDF预览

RDS070N03

更新时间: 2024-09-18 21:55:23
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
4页 44K
描述
Excellent Resistance to damage from static electricity

RDS070N03 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.74其他特性:GATE PROTECTED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RDS070N03 数据手册

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RDS070N03  
Transistors  
Switching (30V, 7A)  
RDS070N03  
zFeatures  
zExternal dimensions (Units : mm)  
1) Low Qg.  
2) Low on-resistance.  
Max.1.75  
3) Excellent resistance to damage from static electricity.  
(
(
)
)
( )  
4
5
( )  
1
8
+
zStructure  
0.15  
1.5 0.1  
3.9 0.15  
+
+
6.0 0.3  
Silicon N-channel  
MOS FET  
+
0.5 0.1  
Each lead has same dimensions  
zEquivalent circuit  
ROHM : SOP8  
(8) (7) (6) (5)  
(8) (7) (6) (5)  
(4)  
(1) (2) (3) (4)  
(1) Source  
(2) Source  
(3) Source  
(4) Gate  
(5) Drain  
(6) Drain  
(7) Drain  
(8) Drain  
(1) (2) (3)  
Gate Protection Diode.  
A protection diode is included between the gate  
and the source terminals to protect the diode  
against static electricity when the product is in  
use.Use a protection circuit when the fixed  
voltage are exceeded.  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Limits  
Unit  
V
DSS  
GSS  
30  
±20  
7
V
V
V
Continuous  
I
D
A
Drain Current  
Pulsed  
I
DP  
DR  
DRP  
28  
A
Continuous  
Pulsed  
I
7
A
Reverse Drain  
Current  
I
28  
A
Continuous  
Pulsed  
I
s
1.6  
A
Source Current  
(Body Diode)  
I
sp  
6.4  
A
P
D
W
°C  
°C  
Total Power Dissipation(Tc=25°C)  
Channel Temperature  
2.5  
Tch  
150  
55~+150  
Storage Temperature  
Tstg  
Pw10µs, Duty cycle1%