5秒后页面跳转
RD8.2SB3 PDF预览

RD8.2SB3

更新时间: 2024-11-14 15:49:27
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
10页 57K
描述
Zener Diode, 8.46V V(Z), 2.48%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2

RD8.2SB3 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.33
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:8.46 V
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.48%工作测试电流:5 mA
Base Number Matches:1

RD8.2SB3 数据手册

 浏览型号RD8.2SB3的Datasheet PDF文件第2页浏览型号RD8.2SB3的Datasheet PDF文件第3页浏览型号RD8.2SB3的Datasheet PDF文件第4页浏览型号RD8.2SB3的Datasheet PDF文件第5页浏览型号RD8.2SB3的Datasheet PDF文件第6页浏览型号RD8.2SB3的Datasheet PDF文件第7页 
DATA SHEET  
ZENER DIODES  
RD2.0S to RD120S  
ZENER DIODES  
200 mW 2 PIN SUPER MINI MOLD  
PACKAGE DIMENSIONS  
DESCRIPTION  
(in millimeter)  
Type RD2.0S to RD120S series are 2 pin super mini  
mold package zener diodes possessing an allowable  
power dissipation of 200 mW.  
2.5±0.15  
1.7±0.1  
FEATURES  
Sharp breakdown characteristic.  
Z
V : Applied E24 standard.  
Cathode  
Indication  
APPLICATIONS  
Circuit for constant voltage, constant current, wave form  
clipper, surge absorver, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Power Dissipation  
P
200  
100  
mW  
mA  
W
F
Forward Current  
I
RSM  
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
P
85  
(at t = 10 µs/ 1 pulse) Show Fig.12  
j
T
150  
°C  
stg  
T
–55 to +150  
°C  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2002 NS CP(K)  
Printed in Japan  
D11444EJ4V0DS00 (4th edition)  
The mark shows major revised points.  
1995  
©

与RD8.2SB3相关器件

型号 品牌 获取价格 描述 数据表
RD8.2SB3-T1 RENESAS

获取价格

Zener Diode, 8.46V V(Z), 2.48%, 0.2W, Silicon, Unidirectional, SUPERMINI-2
RD8.2SB-T1 RENESAS

获取价格

8.2V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SUPERMINI-2
RD8.2SB-T2 RENESAS

获取价格

Zener Diode, 8.2V V(Z), 5.73%, 0.2W, Silicon, Unidirectional, SUPERMINI-2
RD8.2SBX NEC

获取价格

Zener Diode, 8.06V V(Z), 4.09%, 0.2W, Silicon, Unidirectional, SUPERMINI-2
RD8.2SBY NEC

获取价格

Zener Diode, 8.325V V(Z), 4.14%, 0.2W, Silicon, Unidirectional, SUPERMINI-2
RD8.2SBY RENESAS

获取价格

8.325V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SUPERMINI-2
RD8.2SL NEC

获取价格

ZENER DIODES
RD8.2SLN NEC

获取价格

Zener Diode, 8.2V V(Z), 5.64%, 0.2W, Silicon, Unidirectional
RD8.2SLN RENESAS

获取价格

8.2V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
RD8.2SLN1 NEC

获取价格

Zener Diode, 8.2V V(Z), 2.47%, 0.2W, Silicon, Unidirectional