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RD8.2SB3-T1 PDF预览

RD8.2SB3-T1

更新时间: 2024-09-26 21:06:59
品牌 Logo 应用领域
瑞萨 - RENESAS 测试光电二极管
页数 文件大小 规格书
12页 54K
描述
Zener Diode, 8.46V V(Z), 2.48%, 0.2W, Silicon, Unidirectional, SUPERMINI-2

RD8.2SB3-T1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:SUPERMINI-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.33Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:8.46 V表面贴装:YES
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2.48%
工作测试电流:5 mABase Number Matches:1

RD8.2SB3-T1 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0S to RD120S  
ZENER DIODES  
200 mW 2 PINS SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
Type RD2.0S to RD120S Series are 2 PIN Super Mini  
Mold Package zener diodes possessing an allowable power  
dissipation of 200 mW.  
(in millimeter)  
PACKAGE DIMENSIONS  
(in millimeters)  
FEATURES  
Sharp Breakdown characteristic.  
Vz: Applied E24 standard.  
2.5±0.15  
1.7±0.1  
APPLICATIONS  
Circuit for Constant Voltage, Constant Current, Wave form  
Clipper, Surge absorber, etc.  
Cathode  
Indication  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
200 mW  
Forward Current  
IF  
100 mA  
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (at t=10 µs/1 pulse) Show Fig. 12  
150 °C  
Tstg  
–55 to +150 °C  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. D11444EJ3V0DS00 (3rd edition)  
Date Published March 1999 N CP(K)  
Printed in Japan  
1995  
©

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