Datasheet > RBR3LAM40CTF

RBR3LAM40CTF

更新时间： 2023-09-03 20:28:40

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
8页	2181K
描述
RBR3LAM40CTF是适合一般整流用途的车载级高可靠性肖特基势垒二极管。

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中文翻译

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RBR3LAM40CTF 数据手册

RBR3LAM40CTF

Schottky Barrier Diode

(AEC-Q101 qualified)

Data sheet

●Outline

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FSM

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●Features

●Inner Circuit

High reliability

Small power mold type

Low V

●Application

●Packaging Specifications

Packing

General rectification

Embossed Tape

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

180

3000

●Structure

Silicon epitaxial planar

Taping Code

Marking

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

Conditions

Duty≦0.5

Limits

Unit

Reverse direct voltage

Glass epoxy mounted、

60Hzhalf sin waveform、resistive load、

Average rectified forward current

T =112℃ Max.

60Hzhalf sin waveform、Non-repetitive、

Peak forward surge current

FSM

one cycle、T =25℃

Junction temperature⁽¹⁾

Storage temperature

150

-55 ～ 150

℃

stg

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

th(j-a)

(T =25ºC unless otherwise specified)

●Characteristics

Parameter

Forward voltage

Symbol

Conditions

Min. Typ. Max. Unit

I =3A

0.55

Reverse current

V =40V

100 μA

Attention

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www.rohm.com

1/5

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2022/01/18_Rev.003

12 3 4 5 6 7 8

中文翻译

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