RBR40NS30A
Schottky Barrier Diode
Data sheet
●Outline
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ
ꢀ ꢀ ꢀ
ꢀ
V
30
40
V
A
A
R
ꢀ
I
o
ꢀ
ꢀ
I
100
FSM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ
●Features
●Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V
F
●Application
●Packaging Specifications
Packing
Switching power supply
Embossed Tape
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
330
24
1000
●Structure
Silicon epitaxial planar
Taping Code
TL
Marking
BR40NS30A
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Symbol
Conditions
Limits
Unit
V
V
Repetitive peak reverse voltage
Duty≦0.5
30
RM
V
Reverse voltage
Reverse direct voltage
30
V
A
R
60Hzhalf sin waveform,resistive load,
I
o
Average rectified forward current
Peak forward surge current
Junction temperature(1)
Storage temperature
40
I /2 per diode,T =95℃Max.
o
c
60Hzhalf sin waveform,
I
100
A
FSM
non-repetitive,per diode,T =25℃
a
T
-
-
150
℃
j
T
stg
-55 ~ 150
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
θJA
d
j
Attention
www.rohm.com
©2018- ROHMCo., Ltd.All rights reserved.
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
1/6
ꢀ
2019/05/28_Rev.003