Datasheet > RBN40H65T1FPQ-A0

RBN40H65T1FPQ-A0

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	310K
描述
IGBT 650V 40A TO-247A Built-In FRD

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RBN40H65T1FPQ-A0 数据手册

Datasheet

RBN40H65T1FPQ-A0

650V - 40A - IGBT

Power Switching

R07DS1379EJ0121

Rev.1.21

Oct.14.2021

Features

•

Trench gate and thin wafer technology (G8H series)

Built in fast recovery diode in one package

Low collector to emitter saturation voltage

•

High speed switching

Non-specification for short circuit

Applications: UPS, Welding, photovoltaic

inverters, Power converter system

V_CE(sat)= 1.5 V typ. (at I_C= 40 A, V_GE= 15 V, Ta = 25°C)

•

Quality grade: Standard

Key Performance

Type

V_CES

I_C

V_CE(sat), T_C=25°C

I_F

T_j

RBN40H65T1FPQ-A0

650 V

40 A

1.5 V

30 A

175 °C

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

1. Gate

2. Collector

3. Emitter

4. Collector

R07DS1379EJ0121 Rev.1.21

Oct.14.2021

Page 1 of 11

12 3 4 5 6 7...12

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