Datasheet > RBN40H65T1FPQ-A0

RBN40H65T1FPQ-A0

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	310K
描述
IGBT 650V 40A TO-247A Built-In FRD

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RBN40H65T1FPQ-A0 数据手册

RBN40H65T1FPQ-A0

Electrical Characteristics

(Tc = 25°C)

Test Conditions

Item

Collector to emitter leakage current

Gate to emitter leakage current

Gate to emitter threshold voltage

Collector to emitter saturation voltage

Input capacitance

Symbol

I_CES

I_GES

V_GE(th)

V_CE(sat)

C_ies

C_oes

C_res

Q_g

Min



4.1



—



—



—

Typ



Max

200

±1

5.9

2.0

—

Unit

µA

V_CE= 650 V, V_GE= 0 V

V_GE= ±30 V, V_CE= 0 V

V_CE= 10 V, I_C= 0.8 mA



Notes4

1.5

775

105

I_C= 40 A, V_GE= 15 V

V_CE= 25 V

_GE= 0 V

Output capacitance

Reverse transfer capacitance

Total gate charge

—

f = 1 MHz

—

V_GE= 15 V

V_CE= 400 V

I_C= 40 A

Gate to emitter charge

Gate to collector charge

Turn-on delay time

Q_ge

Q_gc

—

t_d(on)

t_r

t_d(off)

t_f



V_CC= 400 V

_GE= +15 V/−5 V

I_C= 40 A

Rise time

—

Turn-off delay time

—

R_g= 16 Ω

T_C= 25 °C

Inductive load

Fall time

—

Turn-on loss energy

Turn-off loss energy

Total switching energy

Turn-on delay time

E_on

0.62

0.52

1.14

—

Notes5

E_off

—

E_total

t_d(on)

t_r

—



V_CC= 400 V

V_GE= +15 V/−5V

I_C= 40 A

Rise time

—

Turn-off delay time

t_d(off)

t_f

120

—

R_g= 16 Ω

Fall time

—

T_C= 150 °C

Inductive load

Turn-on loss energy

Turn-off loss energy

Total switching energy

E_on

0.98

0.88

1.86

—

Notes5

E_off

—

E_total

—

Diode forward voltage

V_F

t_rr

—

1.7

2.2

—

μC

I_F= 30 A ^Notes4

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Notes: 4. Pulse test

I_F= 30 A, d_iF/d_t= 300 A/µs

Q_rr

I_rr

0.21

5. Switching time test circuit and waveform are shown below.

R07DS1379EJ0121 Rev.1.21

Oct.14.2021

Page 3 of 11

1 234 5 6 7...12

中文翻译

下载PDF

与RBN40H65T1FPQ-A0相关器件

型号	品牌	描述	获取价格	数据表
RBN75H125S1FP4-A0	RENESAS	IGBT 1250V 75A TO-247plus Built-In FRD	获取价格
RBN75H65T1FPQ-A0	RENESAS	IGBT 650V 75A TO-247A Built-In FRD	获取价格
RBO08	ETC	REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)	获取价格
RBO08	STMICROELECTRONICS	电池反向和过压保护电路（RBO）	获取价格
RBO08-40G	STMICROELECTRONICS	REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO	获取价格
RBO08-40G_03	STMICROELECTRONICS	REVERSED BATTERY AND OVERVOLTAGE PROTECTION	获取价格