Datasheet > RBN40H65T1FPQ-A0

RBN40H65T1FPQ-A0

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	310K
描述
IGBT 650V 40A TO-247A Built-In FRD

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RBN40H65T1FPQ-A0 数据手册

RBN40H65T1FPQ-A0

Absolute Maximum Ratings

(Tc = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

Unit

650

±30

Collector current

Tc = 25 °C

Tc = 100 °C

I_C

Notes1

Collector peak current

Diode forward current

I_C(peak)

160

Tc = 25 °C

I_F

Tc = 100 °C

Notes1

Diode forward peak current

Collector power dissipation

Junction temperature

I_F(peak)

160

Notes 2

P_C

T_j

185

°C

Notes2

175

Storage temperature

T_stg

–55 to +150

Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a

reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate

reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage

of Semiconductor Devices) and individual reliability data.

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Please use this device in the thermal conditions which the junction temperature does not exceed 175 °C.

Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 °C.

Thermal Resistance Characteristics

(Tc = 25°C)

Item

Symbol

R_th(j-c)

Max. Value ^Notes3

Unit

°C/W

Junction to case thermal resistance (IGBT)

Junction to case thermal resistance (Diode)

0.81

0.97

R_th(j-c)

Notes: 3. Designed target value on Renesas measurement condition. (Not tested)

R07DS1379EJ0121 Rev.1.21

Oct.14.2021

Page 2 of 11

123 4 5 6 7...12

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