Datasheet > RBN40H65T1FPQ-A0

RBN40H65T1FPQ-A0

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	310K
描述
IGBT 650V 40A TO-247A Built-In FRD

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数据手册

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RBN40H65T1FPQ-A0 数据手册

RBN40H65T1FPQ-A0

Reverse Recovery Time vs.

Diode Current Slope (Typical)

Reverse Recovery Time vs.

Forward Current (Typical)

1000

100

1000

100

= 400 V

= 30 A

d /d = 300 A/µs

25 °C

Tc = 150 °C

25 °C

Tc = 150 °C

100

1000

/d (A/µs)

Forward Current

100

Diode Current Slope

(A)

Reverse Recovery Charge vs.

Diode Current Slope (Typical)

Reverse Recovery Charge vs.

Forward Current (Typical)

= 400 V

/d = 300 A/µs

= 30 A

Tc = 150 °C

25 °C

0.1

0.01

0.1

0.01

100

1000

Forward Current

100

Diode Current Slope d /d (A/µs)

(A)

Reverse Recovery Current vs.

Diode Current Slope (Typical)

Reverse Recovery Current vs.

Forward Current (Typical)

100

= 400 V

/d = 300 A/µs

= 400 V

= 30 A

Tc = 150 °C

25 °C

Tc = 150 °C

25 °C

Forward Current

100

1000

Diode Current Slope d /d (A/µs)

(A)

R07DS1379EJ0121 Rev.1.21

Oct.14.2021

Page 7 of 11

1...4 5 678 9 10...12

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