Datasheet > RBN40H65T1FPQ-A0

RBN40H65T1FPQ-A0

更新时间： 2023-12-20 18:46:01

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
12页	310K
描述
IGBT 650V 40A TO-247A Built-In FRD

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数据手册

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RBN40H65T1FPQ-A0 数据手册

RBN40H65T1FPQ-A0

Main Characteristics

Collector Dissipation vs.

Case Temperature

Maximum DC Collector Current vs.

Case Temperature

250

200

150

100

25 50 75 100 125 150 175

Case Temperature Tc (°C)

Forward Bias Safe Operating Area

Reverse Bias Safe Operating Area

180

160

140

120

100

1000

100

0.1

0.01

= 25 Ω

Tc = 25 °C

Single pulse Notes 6

Tc = 150 °C Notes 6

100 200 300 400 500 600 700

0.1

100

1000

(V)

Collector to Emitter Voltage

(V)

Typical Output Characteristics

120

100

120

100

Pulse Test

Tc = 25 °C

15 V

12 V

15 V

11 V

Pulse Test

Tc = 150 °C

12 V

11 V

10 V

9 V

10 V

9 V

8 V

= 7 V

(V)

Collector to Emitter Voltage

Collector to Emitter Voltage V

Notes: 6. Designed target value on Renesas measurement condition. (Not tested)

Renesas recommends that operating conditions are designed according to a document “Power MOS FET・

IGBT Attention of Handling Semiconductor Devices”.

R07DS1379EJ0121 Rev.1.21

Oct.14.2021

Page 4 of 11

1 2 345 6 7...12

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