RBO40-40T

更新时间： 2024-11-18 22:24:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	167K
描述
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

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中文翻译

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RBO40-40T 技术参数

RBO40-40G/M/T

REVERSED BATTERYAND

OVERVOLTAGEPROTECTIONCIRCUIT (RBO)

Application Specific Discretes

A.S.D.

FEATURES

PROTECTION AGAINST”LOADDUMP” PULSE

40A DIODE TO GUARD AGAINST BATTERY

REVERSAL

MONOLITHIC STRUCTURE FOR GREATER

RELIABILITY

BREAKDOWN VOLTAGE : 24 V min.

CLAMPINGVOLTAGE : ± 40 V max.

COMPLIANT WITH ISO / DTR 7637

D²PAK

RBO40-40G

DESCRIPTION

Designed to protect against batteryreversal and

load dump overvoltagesin automotiveapplica-

tions, this monolithic component offers multiple

functionsin the same package:

PowerSO-10^TM

RBO40-40M

D1 : reversed battery protection

T1 : clamping against negative overvoltages

T2 : Transil functionagainst ”load dump” effect.

TO220AB

RBO40-40T

FUNCTIONAL DIAGRAM

January 1997 - Ed : 3

1/15

12 3 4 5 6 7...15

中文翻译

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型号	品牌	替代类型	描述	数据表
RBO40-40G	STMICROELECTRONICS	完全替代	REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

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