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RB731U_1 PDF预览

RB731U_1

更新时间: 2024-10-29 06:07:11
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 170K
描述
Schottky barrier diode

RB731U_1 数据手册

 浏览型号RB731U_1的Datasheet PDF文件第2页浏览型号RB731U_1的Datasheet PDF文件第3页浏览型号RB731U_1的Datasheet PDF文件第4页 
RB731U  
Diodes  
Schottky barrier diode  
RB731U  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
zApplications  
Low current rectification  
㪈 㪐  
ꢀꢁꢂrꢃꢁꢀ  
㪇㪅㪐㪌 㪇㪅㪐㪌  
ꢃꢁꢅꢇrꢃꢁꢅ  
ޓ
ޓޓ
ꢃꢁꢃꢆ  
ꢃꢁꢉrꢃꢁꢅ  
ꢌꢌꢌꢌꢌꢌꢃꢁꢃꢇ  
Each lead has same dimension  
zFeatures  
1) Small mold type. (SMD6)  
ꢈꢋꢊ  
ꢈꢇꢊ  
ꢈꢆꢊ  
㪇㪅㪍  
㪇㪅㪋㪌 㪇㪅㪊㪌 㪇㪅㪊㪌 㪇㪅㪋㪌  
2) Low I  
R
3) High reliability  
㪇㪅㪏㪤㪠㪥㪅  
ꢃ㨪ꢃꢁꢅ  
㪪㪤㪛㪍  
ꢈꢉꢊ  
ꢈꢀꢊ  
ꢅꢁꢂrꢃꢁꢀ  
ꢃꢁꢂꢇ ꢃꢁꢂꢇ  
ꢈꢅꢊ  
ꢃꢁꢄrꢃꢁꢅ  
zStructure  
zConstruction  
ꢅꢁꢅrꢃꢁꢀ  
ꢌꢌꢌꢌꢌꢌꢃꢁꢅ  
Silicon epitaxial planar  
㪩㪦㪟㪤㩷㪑㩷㪪㪤㪛㪍  
㪡㪜㪛㪜㪚㩷㪑㪪㪇㪫㪄㪋㪌㪎  
㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪋  
㫎㪼㪼㫂㩷㪺㫆㪻㪼  
㪈㪧㫀㫅㩷㪤㪸㫉㫂  
zTaping specifications (Unit : mm)  
㱢㪈㪅㪌㪌㫧㪇㪅㪈  
䇭䇭䇭䇭䇭㩷㩷㪇  
㪉㪅㪇㫧㪇㪅㪇㪌  
㪋㪅㪇㫧㪇㪅㪈  
㪇㪅㪊㫧㪇㪅㪈  
㱢㪈㪅㪇㪌㪤㪠㪥  
㪋㪅㪇㫧㪇㪅㪈  
㪊㪅㪉㫧㪇㪅㪈  
㪈㪅㪊㪌㫧㪇㪅㪈  
zAbsolute maximum ratings (Ta=25qC)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
40  
V
Average rectified forward current (*1)  
Forward current surge peak (60Hz̠1cyc)  
Junction temperature  
30  
Io  
IFSM  
Tj  
mA  
mA  
200  
125  
Storage temperature  
-40 to +125  
Tstg  
(*1)Per chip̡Io/3  
zElectrical characteristics (Ta=25qC)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
VF  
IR  
Forward voltage  
-
-
-
-
-
0.37  
IF=1mA  
Reverseu current  
1
-
μA  
pF  
VR=10V  
VR=1V , f=1MHz  
Capacitance between terminals  
Ct  
2.0  
Rev.B  
1/3  

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