Datasheet > RB751

RB751

更新时间： 2024-09-24 03:37:55

品牌	Logo	应用领域
司坦森 - STANSON		肖特基二极管
页数	文件大小	规格书
1页	65K
描述
Schottky Barrier Diode

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数据手册

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RB751 数据手册

Schottky Barrier Diode

30 mA

RB751

ꢀ GENERAL PURPOSE DETEDTION

ꢀ HIGH SPEED SWITCHING

ꢀ LOW REVERSE CURRENT AND

FORWARD VLOTAGE

SOT-23

1. Anode 1

2. NC

3. Cathode

（

℃）

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25

PARAMETERS

Reverse Voltage

SYMBOL MIN TYP MAX UNIT

CONDITION

I_R=1mA

V_R

Rectifying Current

Peak Surge Current

Forward Voltage

I_O

I_FSM

V_F

I_R

200

0.37

60Hz

I_F=1mA

Reverse Current

V_R=10V

Capacitance Between Terminal

Power Dissipation

C_T

2.0

V_R=1V,f=1MHz

0.2

125

Junction Temperature

Storage Temperature

℃

Tstg

-40

℃

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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