Datasheet > RB551M3-30

RB551M3-30

更新时间： 2024-11-26 12:29:47

品牌	Logo	应用领域
星合电子 - GXELECTRONICS		肖特基二极管
页数	文件大小	规格书
2页	366K
描述
Schottky Barrier Diode

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数据手册

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RB551M3-30 数据手册

星合子

XINGHE ELECTRONICS

RB551M3-30

Schottky Barrier Diode / DATA SHEET

◇ Low Forward Voltage Schottky Rectifier

◇ SOD323F Thin SMD package (Fig-1)

◇ RoHS compliant / Green EMC

◇ Matte Tin (Sn) Lead finish

◇ Moisture Level Sensitivity 1

◇ Cathode Band / Device marking

Device Marking Code

RB551M3-30

0.65mm Typ

Fig.-1 Package SOD323F

Absolute Maximum Ratings （Ta = 25 ℃）

Symbol

V_RRM

V_R

Parameter

Value

Units

Repetitive Peak Reverse Voltage

DC Blocking Voltage

I_O

Continuous Forward Current

Non-Repetitive Peak Forward Current ^*1

Power Dissipation

500

I_FSM

P_D

200

℃

T_J

Junction Temperature

125

T_STG

Storage Temperature

-55 to +125

℃

^*18.3 ms single half sine-wave

Electrical Characteristics （Ta = 25 ℃）

Symbol

BV_R

Parameter

Conditions

I_R= 500μA

Min

Max

100

Units

Breakdown Voltage

I_R

Reverse Current

Forward Voltage

μA

V_R= 20V

V_F

0.36

0.47

I_F= 100mA

I_F= 500mA

GAOMI XINGHE ELECTRONICSCO.,LTD.

WWW.SDDZG.COM

TEL:0536-2210359

QQ:464768017

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