Datasheet > RB551SS-30

RB551SS-30

更新时间： 2024-11-27 14:55:15

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	106K
描述
肖特基二极管

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数据手册

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RB551SS-30 数据手册

RB551SS-30

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• High reliablility

• Low leakage current

Transparent top view

Simplified outline DFN1608-2C and symbol

Application

• General Rectification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

0.5

Peak Forward Surge Current 8.3 ms Single half sine-

wave Superimposed on Rated Load (JEDEC Method)

I_FSM

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 40 to + 125

Electrical Characteristics (T_a= 25℃)

Symbol

V_(BR)R

Unit

Parameter

Min.

Max.

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 100 mA

at I_F= 500 mA

V_F

0.36

0.47

Reverse Current

at V_R= 20 V

I_R

µA

1 / 3

Dated: 18/09/2023 Rev: 03

12 3

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