Datasheet > RB551V-30

RB551V-30

更新时间： 2024-09-18 14:54:03

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	147K
描述
肖特基二极管

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RB551V-30 数据手册

RB551V-30

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Small surface mounting type

• Ultra low forward voltage

• High reliability

Anode

Top View

Simplified outline SOD-323 and symbol

Applications

• High frequency rectification switching regulation

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

DC Reverse Voltage

V_R

I_F(AV)

Average Rectified Forward Current

Peak Forward Surge Current (8.3 ms)

Junction Temperature

0.5

I_FSM

T_j

125

℃

Storage Temperature Range

T_stg

- 40 to + 125

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

400

Unit

Typical Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 500 mA

0.36

0.47

Reverse Current

at V_R= 20 V

I_R

100

µA

1 / 3

Dated : 24/04/2023 Rev: 03

12 3

中文翻译

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