Datasheet > RB085BM-40_16

RB085BM-40_16

更新时间： 2024-02-05 11:59:46

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
9页	791K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB085BM-40_16 数据手册

Schottky Barrier Diode

RB085BM-40

Data Sheet

lApplication

lDimensions (Unit : mm)

lLand size figure (Unit : mm)

General Rectification

6.0

lFeatures

1.6

1) Power mold type (TO-252)

2) Cathode common dual type

3) High reliability

2.3 2.3

TO-252

(2)

Cathode

Low V_F

lStructure

ROHM : TO-252

JEITA : SC-63

: Manufacture Date

: Serial number

lConstruction

(1)

(3)

Anode

Silicon epitaxial planar type

lTaping specifications (Unit : mm)

lAbsolute maximum ratings (T_c= 25°C)

Parameter

Symbol

V_RM

V_R

Limits

Unit

Conditions

Duty≦0.5

Repetitive Peak Reverse Voltage

Reverse Voltage

Direct Reverse Voltage

60Hz half sin Wave resistive load,

T_c=102°C max., 1/2 Io per diode

60Hz half sin wave,

I_o

Average forward rectified current

Non-repetitive Forward Current Surge Peak I_FSM

Non-repetitive at T_a=25ºC, per diode

T_j

150

°C

Operating Junction Temperature

Storage Temperature

T_stg

-40 to +150

lElectrical characteristics (T_j= 25°C)

Parameter

Min. Typ. Max.

Conditions

Symbol

V_F

Unit

I_F=5.0A

V_R=40V

0.55

0.2

Forward voltage

Reverse current

Thermal Resistance

I_R

R_th(j-c)

6.0

Junction to Case

°C / W

www.rohm.com

2016.04 - Rev.B

1/5

12 3 4 5 6 7...9

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