Datasheet > RB085T-90_10

RB085T-90_10

更新时间： 2024-01-07 02:49:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	324K
描述
Schottky barrier diode

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中文翻译

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数据手册

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RB085T-90_10 数据手册

Schottky barrier diode

RB085T-90

Applications

Dimensions (Unit : mm)

Structure

Switching power supply

Features

1) Cathode common type.

(TO-220)

(1) (2) (3)

2) Low I_R

3) High reliability

Construction

Silicon epitaxial planer

Absolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current (*1)

Forward current surge peak (60Hz / 1cyc) (*1)

Junction temperature

100

I_FSM

150

C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C

Electrical characteristic (Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.83

150

2.5

Unit

Forward voltage

Reverse current

I_F=5A

I_R

V_R=90

A

Thermal impedance

junction to case

jc

C/W

www.rohm.com

2010.02 - Rev.D

1/3

12 3 4

中文翻译

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