Datasheet > RB068VWM-30

RB068VWM-30

更新时间： 2024-11-07 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
8页	1934K
描述
RB068VWM-30是一款超低IR肖特基势垒二极管。非常适用于普通整流应用。

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中文翻译

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数据手册

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RB068VWM-30 数据手册

RB068VWM-30

Schottky Barrier Diode

Data sheet

●Outline

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FSM

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●Features

●Inner Circuit

High reliability

Small power mold type

Ultra low I

●Application

●Packaging Specifications

Packing

General rectification

Embossed Tape

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

180

3000

●Structure

Silicon epitaxial planar

Taping Code

Marking

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

Conditions

Duty≦0.5

Limits

Unit

Reverse direct voltage

Glass epoxy mounted、

60Hzhalf sin waveform、resistive load、

Average rectified forward current

T =134℃ Max.

60Hzhalf sin waveform、Non-repetitive、

Peak forward surge current

FSM

one cycle、T =25℃

Junction temperature⁽¹⁾

Storage temperature

175

-55 ～ 175

℃

stg

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

th(j-a)

(T =25ºC unless otherwise specified)

●Characteristics

Parameter

Forward voltage

Symbol

Conditions

Min. Typ. Max. Unit

I =2A

0.75

Reverse current

V =30V

0.6

μA

Attention

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www.rohm.com

1/5

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2022/01/18_Rev.002

12 3 4 5 6 7 8

中文翻译

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