Data Sheet
Schottky barrier diode
RB050L-60
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
General rectification
2.0
2.6±0.2
4
3
Features
0.1±0.02
ꢀꢀꢀ 0.1
1)Small power mold type. (PMDS)
2)Low IR
①
②
PMDS
3)High reliability
2.0±0.2
1.5±0.2
Structure
ROHM : PMDS
JEDEC : SOD-106
Construction
Manufacture Date
Silicon epitaxial planar
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
60
60
V
Average rectified forward current (*1)
Average rectified forward current (*2)
Forward current surge peak (60Hz・1cyc)
Junction temperature
3
Io
A
2
70
Io
IFSM
Tj
A
A
150
°C
°C
Storage temperature
40 to 150
Tstg
(*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX
(*2) On the Glass epoxy substrate, half sine wave at 180°
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF1
Min.
Typ.
Max.
0.52
0.56
100
Unit
V
Conditions
IF=2.0A
-
-
-
-
-
-
Forward voltage
VF2
IF=3.0A
V
VR=60V
IR
Reverse current
A
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2011.04 - Rev.A