Datasheet > RB050L-60_11

RB050L-60_11

更新时间： 2024-11-26 09:38:03

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	992K
描述
Schottky barrier diode

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RB050L-60_11 数据手册

Data Sheet

Schottky barrier diode

RB050L-60

Applications

Dimensions (Unit : mm)

Land size figure (Unit : mm)

General rectification

2.0

2.6±0.2

Features

0.1±0.02

ꢀꢀꢀ 0.1

1)Small power mold type. (PMDS)

2)Low I_R

①

②

PMDS

3)High reliability

2.0±0.2

1.5±0.2

Structure

ROHM : PMDS

JEDEC : SOD-106

Construction





Manufacture Date

Silicon epitaxial planar

Taping specifications (Unit : mm)

2.0±0.05

4.0±0.1

0.3

φ1.55±0.05

φ1.55

2.9±0.1

4.0±0.1

2.8MAX

Absolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive)

Reverse voltage (DC)

Average rectified forward current (*1)

Average rectified forward current (*2)

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

150

°C

Storage temperature

40 to 150

Tstg

(*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX

(*2) On the Glass epoxy substrate, half sine wave at 180°

Electrical characteristics (Ta=25°C)

Parameter

Symbol

V_F1

Min.

Typ.

Max.

0.52

0.56

100

Unit

Conditions

I_F=2.0A

Forward voltage

V_F2

I_F=3.0A

V_R=60V

I_R

Reverse current

A

www.rohm.com

1/3

2011.04 - Rev.A

12 3 4

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