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RB050L-60DD PDF预览

RB050L-60DD

更新时间: 2023-09-03 20:25:14
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
8页 2229K
描述
车载肖特基二极管

RB050L-60DD 数据手册

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RB050L-60DD  
Schottky Barrier Diode  
(AEC-Q101 qualified)  
Data sheet  
Outline  
V
60  
3
V
A
A
R
I
o
I
70  
FSM  
Features  
Inner Circuit  
High reliability  
Small power mold type  
Low V  
F
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
12  
1500  
TE25  
43  
Structure  
Silicon epitaxial planar  
Taping Code  
Marking  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
a
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Limits  
60  
60  
Unit  
V
V
V
RM  
V
Reverse direct voltage  
R
Glass epoxy mounted  
I
o
60Hzhalf sin waveformresistive load、  
Average rectified forward current  
3
A
T =101Max.  
c
Glass epoxy mounted、  
60Hzhalf sin waveformresistive load  
I
Average rectified forward current  
Peak forward surge current  
2
A
A
o
60Hzhalf sin waveformNon-repetitive、  
I
70  
FSM  
one cycleT =25℃  
a
Junction temperature(1)  
Storage temperature  
-
-
150  
-40 150  
T
j
T
stg  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
d
j
th(j-a)  
(T =25ºC unless otherwise specified)  
Characteristics  
a
Parameter  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =2A  
F
I =3A  
F
V =60V  
R
-
-
-
-
-
-
0.52  
V
F1  
Forward voltage  
Reverse current  
Attention  
V
0.56  
V
F2  
I
R
100 μA  
www.rohm.com  
©2017- ROHMCo., Ltd.All rights reserved.  
1/5  
2019/05/28_Rev.003  

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