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RA07N4047M

更新时间: 2024-11-24 22:06:47
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
9页 65K
描述
MITSUBISHI RF MOSFET MODULE

RA07N4047M 数据手册

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MITSUBISHI RF MOSFET MODULE  
RA07N4047M  
400-470MHz 7.5W 9.6V PORTABLE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module  
for 9.6-volt portable radios that operate in the 400- to 470-MHz  
range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the drain  
and the RF input signal attenuates up to 60 dB. The output power  
and drain current increase as the gate voltage increases. With a  
gate voltage around 2.5V (minimum), output power and drain  
current increases substantially. The nominal output power  
becomes available at 3V (typical) and 3.5V (maximum). At  
VGG=3.5V, the typical gate current is 1 mA.  
1
4
5
This module is designed for non-linear FM modulation, but may  
also be used for linear modulation by setting the drain quiescent  
current with the gate voltage and controlling the output power with  
the input power.  
1
RF Input (Pin)  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout)  
FEATURES  
• Enhancement-Mode MOSFET Transistors  
(IDD@0 @ VDD=9.6V, VGG=0V)  
RF Ground (Case)  
• Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW  
hT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW  
• Broadband Frequency Range: 400-470MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V  
• Module Size: 30 x 10 x 5.4 mm  
• Linear operation is possible by setting the quiescent drain current  
with the gate voltage and controlling the output power with the  
input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA07N4047M-E01  
SUPPLY FORM  
Antistatic tray,  
25 modules/tray  
RA07N4047M-01  
(Japan - packed without desiccator)  
RA 07N4047M  
23 Dec 2002  
MITSUBISHI ELECTRIC  
1/9  

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