Datasheet > RA07N4047M

RA07N4047M

更新时间： 2022-11-25 12:26:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	65K
描述
MITSUBISHI RF MOSFET MODULE

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RA07N4047M 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECA UTIONS

RA07N4047M

400-470MHz 7.5W 9.6V PORTABLE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module

for 9.6-volt portable radios that operate in the 400- to 470-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 2.5V (minimum), output power and drain

current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out)

FEATURES

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=9.6V, V_GG=0V)

RF Ground (Case)

• P_out>7.5W @ V_DD=9.6V, V_GG=3.5V, P_in=20mW

• h_T>43% @ P_out=7W (V_GGcontrol), V_DD=9.6V, P_in=20mW

• Broadband Frequency Range: 400-470MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

ORDERING INFORMATION:

ORDER NUMBER

RA07N4047M-E01

SUPPLY FORM

Antistatic tray,

25 modules/tray

RA07N4047M-01

(Japan - packed without desiccator)

RA 07N4047M

23 Dec 2002

MITSUBISHI ELECTRIC

1/9

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