Datasheet > RA07N4047M

RA07N4047M

更新时间： 2022-11-25 12:26:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	65K
描述
MITSUBISHI RF MOSFET MODULE

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RA07N4047M 数据手册

MITSUBISHI RF POWER MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA07N4047M

MAXIMUM RATINGS (T_case=+25°C, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

V_DD

V_GG

P_in

Drain Voltage

Gate Voltage

Input Power

Output Power

V_GG<3.5V

12.5

V_DD<9.6V, P_in=0mW

f=400-470MHz,

Z_G=Z_L=50W

P_out

T_case(OP)Operation Case Temperature Range

T_stgStorage Temperature Range

The above parameters are independently guaranteed.

-30 to +90

-40 to +110

°C

ELECTRICAL CHARACTERISTICS (T_case=+25°C, Z_G=Z_L=50W, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

Frequency Range

Output Power

Total Efficiency

2^ndHarmonic

Input VSWR

400

7.5

470

MHz

P_out

h_T

V_DD=9.6V,V_GG=3.5V, P_in=20mW

P_out=7W (V_GGcontrol),

V_DD=9.6V,

2f_o

r _in

I_GG

-25

4:1

dBc

—

P_in=20mW

Gate Current

V_DD=4.8-15V, P_in=10-30mW, P_out<8W (V_GGcontrol),

Load VSWR=4:1

—

Stability

No parasitic oscillation

—

V_DD=13.2V, P_in=20mW, P_out=7.5W (V_GGcontrol),

Load VSWR=20:1

No degradation or

destroy

Load VSWR Tolerance

All parameters, conditions, ratings, and limits are subject to change without notice.

RA 07N4047M

23 Dec 2002

MITSUBISHI ELECTRIC

2/9

123 4 5 6 7...9

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