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R8486_15 PDF预览

R8486_15

更新时间: 2024-11-03 01:26:15
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 225K
描述
PHOTOMULTIPLIER TUBES

R8486_15 数据手册

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PHOTOMULTIPLIER TUBES  
R8486, R8487  
For Vacuum Ultraviolet Light Detection  
Cs-Te (R8486), Cs-I (R8487) Photocathode, MgF2 Window,  
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type  
FEATURES  
GSensitivity in the Vacuum Ultraviolet Region  
R8486.......................................115 to 320 nm  
R8487.......................................115 to 195 nm  
GHigh Quantum Efficiency (at 122 nm)  
R8486........................................22.5 % (Typ.)  
R8487........................................26.0 % (Typ.)  
GHigh Anode Sensitivity  
R8486 (at 254 nm).........5.2 × 105 A/W (Typ.)  
R8487 (at 122 nm).........1.0 × 105 A/W (Typ.)  
PMSF0093  
APPLICATIONS  
GEmission Spectroscopy, etc.  
Figure 1: Typical Spectral Response  
SPECIFICATIONS  
TPMSB0199EA  
100  
CATHODE  
RADIANT  
SENSITIVITY  
GENERAL  
Parameter  
R8486  
R8487  
Unit  
Spectral Response  
115 to 320 115 to 195  
nm  
Wavelength  
10  
200  
130  
Cs-I  
nm  
of Maximum Response  
Photocathode Material  
Window Material  
Minimum Effective Area  
Structure  
Cs-Te  
mm  
MgF2  
8 × 12  
1
Circular-cage  
QUANTUM  
EFFICIENCY  
Dynode  
Number of Stage  
9
R8486  
Material  
Sb-Cs  
R8487  
Direct  
Anode to Dynode No.9  
Approx. 4  
pF  
Interelectrode Anode to  
Capacitances All Other Electrodes  
Base  
0.1  
Approx. 6  
pF  
11-pin base JEDEC No. B11-88  
45  
g
Weight  
Suitable Socket  
Operating Ambient Temperature  
Storage Temperature  
E678-11A (sold separately)  
-30 to +50  
°C  
°C  
0.01  
100  
200  
300  
-30 to +50  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K.  

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