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R8520-406 PDF预览

R8520-406

更新时间: 2024-11-03 01:25:31
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HAMAMATSU /
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2页 115K
描述
PHOTOMULTIPLIER TUBE

R8520-406 数据手册

 浏览型号R8520-406的Datasheet PDF文件第2页 
PHOTOMULTIPLIER TUBE  
R8520-406  
FEATURES  
GFor Low Temperature Operation Down to -110 °C  
GLow Radioactivity 26 mm (1 Inch) square  
GHigh UV Sensitivity by Synthetic Silica Window  
APPLICATIONS  
GHigh Energy Physics  
GAcademic Research  
SPECIFICATIONS  
GENERAL  
Parameter  
Spectral Response  
Description / Value  
160 to 650  
420  
Unit  
nm  
nm  
mm2  
Wavelength of Maximum Response  
Window Material  
Synthetic silica  
Bialkali  
20.5 × 20.5  
Metal channel  
10  
MateriaI  
Minimum Effective Area  
Structure  
Number of Stages  
Photocathode  
Dynode  
Operating Ambient Temperature  
Storage Temperature  
Weight  
-110 to +50  
-110 to +50  
22.9  
°C  
°C  
g
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
900  
150  
0.1  
Unit  
V
V
Between Anode and Cathode  
Between Anode and Last Dynode  
Supply Voltage  
Average Anode Current  
mA  
CHARACTERISTICS (at 25 °C)  
Parameter  
Min.  
80  
9.0  
Typ.  
100  
11.0  
100  
30  
Max.  
Unit  
mA/lm  
mA/W  
%
Luminous (2856 K)  
Blue Sensitivity Index (CS 5-58)  
Radiant at 420 nm  
Cathode Sensitivity  
Quantum Efficiency at 175 nm  
Luminous (2856 K)  
Gain (× 106)  
40  
100  
1
A/W  
Anode Sensitivity  
Anode Dark Current (After 30 minute storage in darkness)  
2
20  
nA  
ns  
ns  
ns  
Anode Pulse Rise Time  
1.8  
12.4  
0.8  
30  
Time Response  
Electron Transit Time  
Transit Time Spread (FWHM)  
Pulse Linearity ( 2 % Deviation)  
mA  
NOTE: Anode characteristics are measured with a voltage distribution ratio and supply voltage shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
G
Dy1  
Dy2  
Dy3  
Dy4  
Dy5  
Dy6  
Dy7  
Dy8  
Dy9  
Dy10  
P
Electrodes  
Ratio  
0.5  
1.5  
2
1
1
1
1
1
1
1
1
0.5  
SuppIy Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.  

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