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R8520-00-C12 PDF预览

R8520-00-C12

更新时间: 2024-11-01 22:24:35
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
6页 150K
描述
POSITION SENSITIVE PHOTOMULTIPLIER TUBES

R8520-00-C12 数据手册

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POSITION SENSITIVE  
PHOTOMULTIPLIER TUBES  
R8520-00-C12  
R8520U-00-C12  
PRELIMINARY DATA  
OCT. 2001  
FEATURES  
6 (X) + 6 (Y) Cross Plate Anode  
Flangeless Type  
High Speed Response  
APPLICATIONS  
PET (Positron Emission Tomography)  
Compact Gamma Camera  
Scintillation Mammography  
GENERAL  
Parameter  
Description  
300 to 650  
Unit  
nm  
nm  
Spectral Response  
Wavelength of Maximum Response  
420  
Material  
Photocathode  
Bialkali  
Minimum Effective Area  
22 × 22  
mm2  
Window Material  
Borosilicate glass  
Metal channel dynode  
11  
Structure  
Dynode  
Number of Stages  
Anode  
6 (X) + 6 (Y) Cross plate anode  
Approx. 28  
Weight  
g
Suitable Socket  
E678-32B (sold separately)  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1000  
0.1  
Unit  
V dc  
mA  
Supply Voltage  
Between Anode and Cathode  
Average Anode Current in Total  
CHARACTERISTICS (at 25 °C)  
Parameter  
Min.  
50  
7
Typ.  
70  
Max.  
Unit  
µA/lm  
Luminous (2856 K)  
Cathode Sensitivity  
Blue Sensitivity Index (CS 5-58)  
8.5  
Anode Sensitivity  
Gain  
Luminous (2856 K)  
15  
70  
1 × 106  
A/lm  
Anode Dark Current in Total of Anodes  
(after 30 min storage in darkness)  
2
10  
nA  
ns  
Time Response  
Anode Pulse Rise Time  
1.4  
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.  
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE  
Electrodes  
Ratio  
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11  
P
1
1
1
1
0.5  
0.5  
1.5  
2
1
1
1
1
1
Supply Voltage: 800 V dc, K: Cathode, G: Grid, Dy: Dynode, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.  

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