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R759_15

更新时间： 2024-09-16 01:26:07
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HAMAMATSU /
页数 文件大小 规格书
2页 40K
描述
For UV Range, 13 mm (1/2 Inch) Diameter Head-on, 10-Stage, Cs-Te Photocathode

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R759_15 数据手册

 浏览型号R759_15的Datasheet PDF文件第2页 
PHOTOMULTIPLIER TUBE  
R759  
For UV Range, 13 mm (1/2 Inch) Diameter,  
Head-on, 10-Stage, Cs-Te Photocathode  
GENERAL  
Parameter  
Description / Value  
Unit  
nm  
nm  
nm  
—
mm  
—
—
Spectral Response*  
Wavelength of Maximum Response  
Wavelength of Maximum Quantum Efficiency  
160 to 320  
240  
200  
Cs-Te  
MateriaI  
Minimum Effective Area  
Photocathode  
10  
Window Material  
Dynode  
Synthetic silica glass  
Linear focused  
10  
Structure  
Number of Stages  
Anode to Last Dynode  
Anode to All Other Electrodes  
—
Direct Interelectrode  
Capacitance  
Operating Ambient Temperature  
Storage Temperature  
Base  
1.0  
2.0  
pF  
pF  
°C  
°C  
—
-30 to +50  
-80 to +50  
13-pin glass base  
E678-13F (supplied)  
Suitable Socket  
—
* Operate in a nitrogen-purged environment for VUV detection.  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1250  
250  
Unit  
V
V
Between Anode and Cathode  
Supply Voltage  
Between Anode and Last Dynode  
Average Anode Current  
0.01  
mA  
CHARACTERISTICS (at 25 °C)  
Parameter  
Cathode Sensitivity at 254 nm  
Min.  
—
4.0 × 103  
Typ.  
28  
1.4 × 104  
5.0 × 105  
0.3  
Max.  
—
—
—
1
Unit  
mA/W  
A/W  
—
nA  
ns  
Anode Radiant Sensitivity at 254 nm  
Gain  
Anode Dark Current (after 30 min. storage in darkness)  
—
—
—
—
Anode Pulse Rise Time  
Electron Transit Time  
2.5  
24  
—
—
Time Response  
ns  
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE  
Electrodes  
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10  
P
Ratio  
1
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 Vdc, K: Cathode, Dy: Dynode, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.  
12

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